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5500versusMJB4

ASML 5500, SUSS MicroTec MJB4, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
5500ASML
MJB4SUSS MicroTec
OEMASMLSUSS MicroTec
CategoryLithographyLithography
Wafer size100mm100mm
Process node248 nm (KrF) DUVabout 800 nm
Introduced——
Production run1991–—
Lifecycle——
Lifecycle milestones——
Control system——
Generation—i-line
FamilyASML 5500SUSS MicroTec MJB4
Cited variants
  • PAS 5500/300[1]
  • PAS 5500/200i-line[2]
  • PAS 5500/60i-line[3]
  • PAS 5500/275i-line[4]
—
Specifications
ManufacturerASML[1]—
ModelPAS 5500/300[1]—
DescriptionDeep-UV Stepper Photolithography[1]—
Exposure wavelength248 nm (KrF)[1]i-line (365 nm) with filter installed; also lines at 405 nm and 436 nm[5]
Configured wafer size4 in wafers[1]—
Maximum wafer size4 in (100 mm) wafers with SEMI standard wafer flat (not notch)[1]—
Layer-to-layer overlay accuracybetter than 30 nm[1]—
Minimum feature size≤150 nm isolated lines; ≤200 nm dense patterns[1]—
Full-field useable exposure areaintersection of a 31 mm diameter circle and a 22 mm x 27 mm rectangle[1]—
Sample size100 mm wafers with SEMI std. major flat[1]—
Alignment accuracy< 50 nm[1]about 0.5 µm[5]
Wafer thicknessminimum approximately 200 µm; maximum approximately 1.1 mm[1]—
Maximum dose~100 mJ[1]—
Minimum Feature Size (dense)≤200 nm[1]—
Minimum Feature Size (isolated lines)≤150 nm[1]—
Overlay AccuracyBetter than 30 nm[1]—
Maximum Field Size (usable exposure area)22 mm x 27 mm rectangle within a 31 mm diameter circle[1]—
Wafer Size (standard)4 inch (100 mm)[1]—
ThroughputTypically minutes per wafer (multiple 4-inch wafers)[1]—
Reduction Ratio5x (for some variants, e.g., /200 and /60)[2]—
Numerical Aperture (variable)0.48-0.60 (for /200 variant)[2]—
Alignment Accuracy< 50 nm (for /300 variant)[1]—
Resolution (PAS 5500/300)≤150 nm isolated lines, ≤200 nm dense patterns[1]—
Exposure wavelength (PAS 5500/60)365 nm[3]—
Reduction ratio (PAS 5500/60)5:1[3]—
Wafer size (PAS 5500/300)100 mm (4 inch) wafers with SEMI standard flat[1]—
Overlay accuracy (PAS 5500/300)better than 30 nm[1]—
Resolution (PAS 5500/200)350 nm[2]—
Numerical aperture (PAS 5500/200)0.48-0.60 variable[2]—
Maximum field size (PAS 5500/200)22x22 mm[2]—
Minimum feature size (PAS 5500/60)450 nm[3]—
Type—Mask/wafer aligner[5]
Use—Research and development[5]
Wafer diameter—up to 4 inch (100 mm)[5]
Alignment mode—Top side alignment (TSA)[5]
Exposure source—Mercury (Hg) lamp[5]
Wavelengths stated—365 nm, 405 nm, 436 nm[5]
Illumination setup—20 mW/cm2 @ 365 nm (i-line filter installed)[5]
Alignment precision—about 0.5 µm[5]
Exposure modes—flood-exposure, proximity, soft contact, hard contact[5]
Objective magnification—5x, 10x[5]
Special offset objectives—For chip alignment; minimum separation down to 10 mm[5]
Stage travel—X = ±30 mm, Y = ±30 mm, Θ = ±4°[5]
Substrate thickness range—0.1 mm to 4.0 mm[5]
Contact options—Soft, hard, and vacuum contact[6]
Mask thickness—up to 9 mm[6]
Optics option—Universal Optics option for UV 250, UV 350 and UV 400[6]
Alignment optics—SUSS single field microscope[6]
Alignment method—Wedge Error Compensation (WEC)[6]
Alignment modes stated—Top side and infrared alignment[6]
Key applications—LED lithography, MEMS, UV-NIL[6]
Applications—Research and development[5]
Substrate thickness—0.1 mm up to 4.0 mm[5]
Light source—Mercury (Hg) lamp[5]
Spectral lines—365 nm, 405 nm, 436 nm[5]
Illumination configuration—i-line (filter installed), only 365 nm line absorbed[5]
Default illumination intensity—20 mW/cm2 @ 365 nm[5]
Resolution—Minimum about 800 nm with thin PR thickness (< 1 µm)[5]
Alignment modes—Top-side alignment (TSA)[5]
Wedge error compensation—Semi-automatic procedure[5]
Mask holders—Three different holders with vacuum clamping[5]
Chucks—Three different chucks for all sizes[5]
Optional objectives—11x offset objectives: working distance 14.1 mm; minimum separation 10 mm[5]
Objectives magnification—5x, 10x[5]
XY table travel—X = ± 30 mm, Y = ± 30 mm, Θ = ± 4°[5]
Substrate handling—Manual, up to 100 mm diameter[5]
High resolution prints—Down to 0.5 µm[6]
Universal Optics option—UV 250, UV 350, UV 400[6]
Contact modes—Soft, hard, vacuum contact[6]
Alignment options—Top side and infrared alignment[6]
Optics—SUSS single field microscope[6]
Wafer size—up to 4 inch (100 mm) diameter[5]
XY table travel (X, Y, Θ)—X = ±30 mm, Y = ±30 mm, Θ = ±4°[5]
Objective magnifications—5x, 10x[5]
Offset objectives separation—minimum separation is 10 mm[5]
Maximum mask thickness—up to 9 mm[6]
Illumination power—20 mW/cm² at 365 nm (i-line)[5]
Resolution (minimum)—about 800 nm with thin PR thickness (< 1 µm)[5]
Resolution (printed)—down to 0.5 µm[6]
XY table movement—X = ±30 mm, Y = ±30 mm, Θ = ±4°[5]
Special offset objectives minimum separation—10 mm[5]
Mask thickness support—up to 9 mm[6]
Wafer/substrate thickness range—0.1 mm to 4.0 mm[5]
Substrate size—to 100 mm[6]
Wedge Error Compensation (WEC)—semi-automatic procedure[5]
Machine type—Mask/wafer aligner for research and development[5]
Default exposure intensity—20 mW/cm2 @ 365 nm[5]
XY stage travel—X = ± 30 mm, Y = ± 30 mm, Θ = ± 4°[5]
Small wafer/chip handling—Special offset objectives for alignment of small wafer/chips; minimum separation is 10 mm[5]
Contact and alignment features—Wedge Error Compensation (WEC); splitfield mode; top side and infrared alignment; vacuum contact; universal optics option for UV 250, UV 350, and UV 400[6]
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Sources (6)Every fact above is drawn from these public sources
  1. [1]wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu
  2. [2]manualslib.commanualslib.com
  3. [3]snfguide.stanford.edusnfguide.stanford.edu
  4. [4]asml.comasml.com
  5. [5]epfl.chepfl.ch
  6. [6]pnf.uchicago.edupnf.uchicago.edu