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Comparison ledger

5500/80versus100

ASML 5500/80, CEE 100, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100CEE
OEMASMLCEE
CategoryLithographyLithography
Wafer size4-inch wafers; convertible to 3-inch or 6-inch platforms6"
Process node500nm resolution—
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generationi-Line—
FamilyASML 5500/80CEE 100
Cited variants—
Specifications
Resolution500nm[2]—
Alignment accuracy<70nm[2]—
Wafer setupSet up for 4-inch wafers[2]—
Convertible platforms3-inch or 6-inch platforms[2]—
Field size21mm x 21mm[2]—
Depth of focus1.3µm[2]—
CategoryLithography[3]—
Wafer size4-inch wafers; convertible to 3-inch or 6-inch platforms[2]Up to 6 inches[5]
Generationi-line[4]—
Tool type—Spray Developer[1]
Accepts wafer size—up to 6" wafers[5]
Programmable programs—10 programs[5]
Steps per program—up to 10 steps[5]
Programmable step parameters—Acceleration, Speed, Time[5]
Associated document—CEE Model 100CB Spinner.doc[5]
Programs—10 programs each with up to 10 steps[5]
Control parameters—Acceleration, Speed, Time[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]nanofab.ece.cmu.edunanofab.ece.cmu.edu
  2. [2]nanofab.ece.cmu.edunanofab.ece.cmu.edu
  3. [3]waferpedia.comwaferpedia.com
  4. [4]waferpedia.comwaferpedia.com
  5. [5]nanofab.utah.edunanofab.utah.edu