Waferpedia

Comparison ledger

Centura MXP Dryversus100 ICP Fluorine

Applied Materials Centura MXP Dry, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Centura MXP DryApplied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials Centura MXPOxford Instruments 100 ICP Fluorine
Specifications
2chD/E CH-A/B[1]—
ConfigurationPolymer[1]—
Tool typeDry etcher[2]—
ManufacturerApplied Materials[2]—
Wafer size8 inch[1]4 inch, 6 inch, 8 inch (with clamp change)[3]
Chamber configuration2ch D/E CH-A/B[1]—
Process configurationPolymer[1]—
Vintage1996[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[3]
Cryo DRIE etch rate—up to 5 µm/min[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]nanofab.utah.edunanofab.utah.edu