Comparison ledger
Applied Materials Centura AP eMax CT+, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura AP eMax CT+Applied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura AP eMax CT+ | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Wafer size | 300 mm[1] | 4 inch, 6 inch, 8 inch (with clamp change)[4] |
| Chamber configuration | 3 chambers[1] | — |
| Vintage year | 2007[2] | — |
| Process type | Oxide etch[1] | — |
| Manufacturer | Applied Materials[3] | — |
| Model | Centura AP eMax CT+[3] | — |
| Tool type | Etcher[3] | — |
| Application | Semiconductor manufacturing[2] | — |
| Vintage | 01.06.2007[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[4] |
| Cryo DRIE etch rate | — | up to 5 µm/min[4] |
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