Waferpedia

Comparison ledger

0041-39086 ESC PartversusSLR-770

Applied Materials 0041-39086 ESC Part, Plasma-Therm SLR-770, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0041-39086 ESC PartApplied Materials
SLR-770Plasma-Therm
OEMApplied MaterialsPlasma-Therm
CategoryEtchEtch
Wafer size—2"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
Family—Plasma-Therm SLR 770
Specifications
System type—Shuttle lock ICP inductively coupled plasma etch system[1]
Controller—PC controller[1]
Load lock—Vacuum load lock with wafer transfer robot[1]
Wafer size capability—Can process wafers from 2" to 8" depending on which process kit is installed[1]
Current configuration—Currently configured with 3" kit[1]
Thermal transfer—Thermal transfer module for effective cooling of substrate utilizing helium backside thermal transfer in conjunction with computer controlled substrate clamping[1]
Plasma source—High frequency RF-based inductively coupled plasma source capable of high density plasma generation[1]
Pressure control—Closed loop pressure control[1]
Pumping—Turbo pump with roughing pump[1]
Gas controllers—Total of eight MFC gas controllers[1]
Previously used gases—N2, O2, CHF3, AR, CH4, CL2, BCL3, CF4[1]
Included accessory—Water chiller[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]nanolab.ucla.edunanolab.ucla.edu