Comparison ledger
Applied Materials 0010 47763, Plasma-Therm 790 + RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 790 + RIEPlasma-Therm |
|---|---|---|
| OEM | Applied Materials | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Plasma-Therm 790 + RIE |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Process type | — | Reactive ion etcher / reactive ion etch system[4] |
| Configured for | — | RIE (Reactive Ion Etching) processing of silicon substrates[5] |
| Maximum wafer size | — | 200 mm[6] |
| Platen size | — | 279 mm[6] |
| Platen/sample table | — | 6" water cooled sample table[7] |
| RF power supply | — | 500 W RF power supply[7] |
| RF generator | — | 500W RF generator[8] |
| RF frequency | — | 13.56 MHz[8] |
| Electrodes | — | 240 mm diameter[8] |
| Chamber | — | Non load-locked chamber[8] |
| Gas delivery | — | Shower head gas delivery system[8] |
| Gas channels | — | Six MFC gas channels[8] |
| Process gases | — | SF6, CHF3, CF4, oxygen (O2), argon (Ar); previous gases also listed as AR, N2, O2, SF6, CHF3, CF4[6] |
| Pressure range | — | < 900 mTorr[6] |
| Power range | — | < 350 W[6] |
| Vacuum system | — | Turbo pumped vacuum system with roughing pump[8] |
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