Waferpedia

Comparison ledger

0010-21246 Partversus320 PC

Applied Materials 0010-21246 Part, STS 320 PC, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-21246 PartApplied Materials
OEMApplied MaterialsSTS
Category——
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
Family—STS 320 PC
Specifications
Type—Fully automatic computer controlled reactive ion etching system[1]
End point detection—Included[1]
Cathode diameter—30 cm[1]
Cathode area—706.5 cm2[1]
RF forward power range—10 to 600 watts[1]
Chamber max pressure—500 mTorr[1]
Substrate sizes—2 to 8 inch and small fragments[1]
Process gases—SF6, CHF3, C3F8, He, CF4, O2, and N2[1]
Sources (1)Every fact above is drawn from these public sources
  1. [1]mp.aau.dkmp.aau.dk