Comparison ledger
Applied Materials 0010-16392 ESC Assembly, STS Multiplex ASE ICP Deep Silicon, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | |
|---|---|---|
| OEM | Applied Materials | STS |
| Category | Etch | Etch |
| Wafer size | — | Manual wafer lock |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | STS Multiplex |
| Specifications | ||
| OEM | Applied Materials[1] | STS[3] |
| Model | 0010-16392[1] | Multiplex ASE[3] |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| Wafer size | — | Manual wafer lock[3] |
| Configuration | — | Low and high frequency ICP (Inductively Coupled Plasma) etch system.[3] |
| Equipment type | — | Deep Silicon Etcher (Inductively Coupled Plasma)[3] |
| Wafer sizes | — | 6 inch[3] |
| Wafer lock | — | Manual wafer lock[3] |
| Plasma frequency | — | Low and high frequency ICP (Inductively Coupled Plasma)[3] |
| Process description | — | ASE (Advanced Silicon Etch) process consists of alternating cycles of etching and protective polymer deposition[3] |
| Application | — | Deep Si trench etching of a single 6" [150mm] substrate[3] |
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