Comparison ledger
Applied Materials 0010-13622 RF Match for, Lam Research Concept One, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | Concept OneLam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Lam Research Concept One |
| Cited variants | — | |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[3] | Nitride / TEOS[1] |
| Model | 0010-13622[3] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[3] | — |
| Feature | High Efficiency HE RF Match-Bias[3] | — |
| Phase | — | 3 Phase[1] |
| Voltage | — | 208V Vac[1] |
| Host Interface | — | SECS-[7] |
| Gas Box Type | — | External[7] |
| EMO's | — | Push Button[7] |
| One Arm Robot | — | Lift, Rotate Motor[7] |
| Wafer size 6 inch | — | 6 inch[1] |
| Wafer size 8 inch | — | 8 inch[2] |
| Process types | — | Nitride, TEOS, TEOS-R[1] |
| Power requirements | — | 208V, 50/60 Hz, 3 Phase[1] |
| Vintage year | — | 2012[2] |
| Processes | — | Nitride, TEOS[1] |
| Wafer size | — | 6 inch[1] |
| Power supply | — | 208V, 50/60 Hz, 3-phase[1] |
| Vintage (example unit) | — | 2012[2] |
Plan your fab
Building a Deposition process? Get a complete equipment list.
Open the fab equipment planner →