Comparison ledger
Applied Materials 0010-13622 RF Match for, Denton Vacuum 635, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | 635Denton Vacuum |
|---|---|---|
| OEM | Applied Materials | Denton Vacuum |
| Category | Deposition | Deposition |
| Wafer size | — | 8" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Denton Vacuum 635 |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | — |
| Model | 0010-13622[1] | 635[2] |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| OEM | — | Denton Vacuum[2] |
| Tool type | — | Deposition[3] |
| Process capabilities | — | Four confocal cathodes, inclined 25 degrees off vertical[2] |
| Standard targets | — | 4" Au, 4" Cr, 3" Pt, 3" Ti[2] |
| Film thickness range | — | From a few nm to hundreds of nm[2] |
| Sputter power supplies | — | DC1 pulse or DC, DC2, RF1[2] |
| Cathode switching | — | Switch-control any supply to any cathode[2] |
| Co-sputter capability | — | Yes[2] |
| Substrate pre-clean | — | RF2 supply[2] |
| Reactive sputtering | — | Nitrogen or oxygen[2] |
| Stage diameter | — | 8 inch[2] |
| Substrate rotation | — | +/- 5% uniformity[2] |
| Chamber base pressure | — | 2 x 10^-7 Torr in 12 hours[2] |
| Substrate heating | — | Up to 500 C[2] |
| Liftoff deposition | — | With water-cooled stage[2] |
| Argon pressure range | — | < 1-90 mT[2] |
| APC / MFC controller | — | 100 sccm MFC controller[2] |
| Process Type | — | Sputter deposition (magnetron sputtering)[2] |
| Cathodes | — | Four confocal cathodes, inclined 25 degrees off vertical[4] |
| Stage Diameter | — | 8 inch (200 mm)[2] |
| Deposition Uniformity | — | +/- 5% over 200 mm wafer/pallet area[4] |
| Substrate Rotation | — | 50% = 13 RPM[4] |
| Substrate Heat | — | Up to 500 °C (heated stage installed)[2] |
| Base Pressure | — | Base pressure typical < 5×10⁻⁸ Torr; chamber base pressure in 12 hours = 2×10⁻⁷ Torr[4] |
| Chamber Pressure Range | — | < 1-90 mT controllable with APC and 100 sccm Ar MFC controller[4] |
| Sputter Power Supplies | — | DC1 (DC or pulsed DC), DC2, RF1 (auto-tuning), RF2 (for pre-clean). Switch-control any supply to any cathode, including simultaneous co-sputtering.[4] |
| Pre-clean Rate (RF2) | — | ~11 nm/min at 100 W Ar, ~33 nm/min at 300 W[4] |
| Reactive Sputtering | — | Plasma Emission Monitor (PEM) controllable for N₂ or O₂, using pulsed DC supply[4] |
| Cryo Pump | — | Cryo pumped deposition chamber; cryo temperature < 20 K[4] |
| Film Thickness Control | — | Controllable from a few nm to hundreds of nm[2] |
| Cooling Stage | — | Water-cooled stage (standard configuration) supports liftoff deposition at 100-200W[4] |
| Load Lock | — | Ventable load lock with auto transfer[4] |
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