Comparison ledger
Advantest F 5112 E-Beam Lithography, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | F 5112 E-Beam LithographyAdvantest | 1505 G 6 ENikon |
|---|---|---|
| OEM | Advantest | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Advantest F 5112 E-Beam Lithography | Nikon 1505 |
| Specifications | ||
| Accelaration voltage | 50 kV[1] | — |
| Field size | 1600 μm x800 μm[1] | — |
| Beam current | 3.5 μA[1] | — |
| Beam size | 4 μm x4 μm variable shaped beam[1] | — |
| Scanning speed | 8 MHz[1] | — |
| Stitching accuracy | 45 nm[1] | — |
| Overlay accuracy | 45 nm[1] | — |
| Configuration | 50/60 Hz[2] | 5" reticle[4] |
| Acceleration voltage | 50 kV[1] | — |
| Wafer size | 3 inch[1] | — |
| Minimum feature size | 100 nm[3] | — |
| CD variation | 3 sigma <= 15 nm[3] | — |
| Exposure method | Block exposure[3] | — |
| Maximum number of block patterns | 70[3] | — |
| Power frequency | 50/60 Hz[2] | — |
| Model | F 5112[1] | 1505 G 6 E[4] |
| Max. no. of block patterns | 70[3] | — |
| Resolution | — | 650 nm[5] |
| Numerical Aperture | — | 0.54[5] |
| Reduction | — | 5x[5] |
| Exposure Field | — | 15 x 15 mm[5] |
| Alignment Accuracy | — | 130 nm[5] |
| Wafer Size | — | 4 inch[4] |
| Light Source | — | g-line[6] |
| Introduction Year | — | 1988[5] |
| NA (Numerical Aperture) | — | 0.54[5] |
| Make | — | Nikon[4] |
| Category | — | Stepper[4] |
| Wafer Sizes | — | 4 inch[4] |
| Exposure type | — | g-line[5] |
| NA | — | 0.54[5] |
| Exposure field | — | 9.3 x 18.8 mm[5] |
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